DocumentCode
348208
Title
Some experimental and numerical investigations into the Two Roots Model on GaAs based diodes: giant hysteresis observed
Author
Khan, W.I. ; Ishaque, M. ; Christina, T.
Author_Institution
Dept. of Phys., Kuwait Univ., Safat, Kuwait
Volume
1
fYear
1999
fDate
1999
Firstpage
265
Abstract
Some efforts have been made on GaAs based diodes for experimental and numerical investigations into the Two Roots Model. The dependence of the width of the hysteresis on the thermal annealing temperature shows effects of impurities. Finally the numerical simulation lead to the manifestation of the phase-diagram involved in the Two Roots Model
Keywords
III-V semiconductors; annealing; gallium arsenide; hysteresis; semiconductor device models; semiconductor diodes; GaAs; GaAs diode; hysteresis; impurity; numerical simulation; phase diagram; thermal annealing; two roots model; Annealing; Doping; Gallium arsenide; Hysteresis; Light emitting diodes; Numerical simulation; Schottky diodes; Semiconductor diodes; Semiconductor impurities; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International
Conference_Location
Sinaia
Print_ISBN
0-7803-5139-8
Type
conf
DOI
10.1109/SMICND.1999.810512
Filename
810512
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