Application of transfer matrix method for detailed description of phonon-polariton states in semiconductor superlattices

Author

Gorea, Oleg ; Tatarinskaya, Olga

Author_Institution

State Univ. of Moldova, Chisinau, Moldova

Volume

1

fYear

1999

fDate

1999

Firstpage

371

Abstract

On the base of the transfer matrix formalism the dispersion of phonon polaritons in finite and infinite semiconductor SLs was calculated. The account of retardation effects leads to appearance of the additional “dynamical” bandgaps in the interface polariton spectra. The complex reflection coefficients also were calculated for the particular case of GaAs/GaAsP SLs. It is shown that the fine structure of spectra can be described by the method

Keywords

III-V semiconductors; energy gap; gallium arsenide; gallium compounds; interface phonons; interface states; phonon dispersion relations; polaritons; reflectivity; semiconductor superlattices; GaAs-GaAsP; GaAs/GaAsP; complex reflection coefficients; dispersion; dynamical bandgaps; fine structure; finite semiconductor SL; infinite semiconductor SL; interface polariton spectra; phonon-polariton states; retardation effects; semiconductor superlattices; transfer matrix method; Gallium arsenide; Integral equations; Laser sintering; Optical reflection; Optical surface waves; Phonons; Photonic band gap; Semiconductor lasers; Semiconductor superlattices; Surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810540

Filename

810540