ZnO thin film optical window as partner for photodetecting heterostructures on Si and InP

Author

Budianu, Elena ; Purica, Munizer ; Gavrila, Raluca ; Nastase, Stelian ; Rusu, Emil ; Slobodchikov, S.V. ; Turcu, M.

Author_Institution

Nat. Inst. for Res. & Dev. of Microtechnol., Bucharest, Romania

Volume

1

fYear

1999

fDate

1999

Firstpage

389

Abstract

Thin films of ZnO were deposited by thermal decomposition of Zn(C ₅H₇O₂)₂ on semiconductor substrate, n-type silicon, p-type InP and also on transparent glass substrate. The heterostructures of ZnO/Si and ZnO/InP were prepared and investigated for optical properties by spectrophotometry and surface morphology by AFM. The lateral photovoltage characteristic and surface roughness demonstrate availability of heterostructures with ZnO thin film for optoelectronic devices

Keywords

II-VI semiconductors; MOCVD; atomic force microscopy; optical films; optical windows; photodetectors; photodiodes; semiconductor growth; semiconductor thin films; spectrophotometry; surface photovoltage; surface topography; transparency; zinc compounds; AFM; InP; MOCVD; Si; ZnO; ZnO-InP; ZnO-Si; high transparency; lateral photovoltage characteristic; optical properties; optical transmission; optoelectronic devices; photodetecting heterostructures; semiconductor substrate; spectral response; spectrophotometry; surface morphology; surface roughness; thermal decomposition; thin film optical window; transparent glass substrate; Indium phosphide; Optical films; Rough surfaces; Semiconductor thin films; Sputtering; Substrates; Surface morphology; Surface roughness; Windows; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1999. CAS '99 Proceedings. 1999 International

Conference_Location

Sinaia

Print_ISBN

0-7803-5139-8

Type

conf

DOI

10.1109/SMICND.1999.810544

Filename

810544