Title :
High pressure hydrogen sensitization of fibers for enhanced photosensitivity
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
Summary form only given, as follows. The UV photosensitivity of GeO2 doped optical fibers can be greatly enhanced by using low temperature/high pressure H2 “loading”. UV irradiation reacts the dissolved H2 at Ge-O-Si sites causing large permanent index changes
Keywords :
silicon compounds; Ge-O-Si sites; GeO2 doped optical fibers; H2 loading; SiO2:GeO2; UV irradiation; UV photosensitivity; dissolved H2; enhanced photosensitivity; hydrogen sensitization; permanent index changes; Hydrogen; Optical fibers; Temperature sensors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586349
