• DocumentCode
    3482672
  • Title

    Wafer level packaging for GaAs optical detector using through wafer grooves (TWG) fabricated by mechanical dicing and wet etching

  • Author

    Jiaotuo Ye ; Shuangfu Wang ; Chunsheng Zhu ; Gaowei Xu ; Le Luo

  • Author_Institution
    Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
  • fYear
    2013
  • fDate
    11-14 Aug. 2013
  • Firstpage
    1305
  • Lastpage
    1307
  • Abstract
    This paper reported a wafer level packaging (WLP) of GaAs optical detector, of which the packaging structure is featured by a Through Wafer Groove (TWG) fabricated by using a combined methodology of both mechanical dicing and wet chemical etching. This fabrication approach had the advantage of low process temperature (under 250 °C), low cost, no ion bombardment damage, and good uniformity. The packaging structure and the fabrication process were presented, and the results were discussed. Besides, the electrical connection was tested, which showed a high reliability.
  • Keywords
    III-V semiconductors; electric connectors; etching; gallium arsenide; wafer level packaging; GaAs; GaAs optical detector; TWG; WLP; electrical connection; ion bombardment damage; mechanical dicing; packaging structure; through wafer grooves; wafer level packaging; wet chemical etching; wet etching; Chemicals; Etching; Fabrication; Gallium arsenide; Optical detectors; Packaging; Wafer scale integration; GaAs image sensor; Through Silicon Via (TSV); Through wafer grooves (TWG); Wafer level packaging (WLP);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
  • Conference_Location
    Dalian
  • Type

    conf

  • DOI
    10.1109/ICEPT.2013.6756697
  • Filename
    6756697