DocumentCode
3482672
Title
Wafer level packaging for GaAs optical detector using through wafer grooves (TWG) fabricated by mechanical dicing and wet etching
Author
Jiaotuo Ye ; Shuangfu Wang ; Chunsheng Zhu ; Gaowei Xu ; Le Luo
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Shanghai, China
fYear
2013
fDate
11-14 Aug. 2013
Firstpage
1305
Lastpage
1307
Abstract
This paper reported a wafer level packaging (WLP) of GaAs optical detector, of which the packaging structure is featured by a Through Wafer Groove (TWG) fabricated by using a combined methodology of both mechanical dicing and wet chemical etching. This fabrication approach had the advantage of low process temperature (under 250 °C), low cost, no ion bombardment damage, and good uniformity. The packaging structure and the fabrication process were presented, and the results were discussed. Besides, the electrical connection was tested, which showed a high reliability.
Keywords
III-V semiconductors; electric connectors; etching; gallium arsenide; wafer level packaging; GaAs; GaAs optical detector; TWG; WLP; electrical connection; ion bombardment damage; mechanical dicing; packaging structure; through wafer grooves; wafer level packaging; wet chemical etching; wet etching; Chemicals; Etching; Fabrication; Gallium arsenide; Optical detectors; Packaging; Wafer scale integration; GaAs image sensor; Through Silicon Via (TSV); Through wafer grooves (TWG); Wafer level packaging (WLP);
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology (ICEPT), 2013 14th International Conference on
Conference_Location
Dalian
Type
conf
DOI
10.1109/ICEPT.2013.6756697
Filename
6756697
Link To Document