Polarization-independent InGaAlAs/InAlAs electroabsorption modulators with an optimized strained-MQW

Author

Akage, Y. ; Takeuchi, H. ; Tsuzuki, K. ; Kondo, S. ; Noguchi, Y. ; Okamoto, H. ; Yamanaka, T.

Author_Institution

NTT Photonics Labs., Nippon Telegraph & Telephone Corp., Atsugi, Japan

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

191

Abstract

It is well known that polarization-independent operation has been obtained in a MQW EA modulator with tensile-strained walls. However, as far we know, no synthetic approach to the polarization-independent EA modulator by means of optimizing the MQW strain has been reported. In this paper, we describe a well-resolved absorption spectra correlating to the valence-subband structure as a function of the strain of the well. Also we report our development of the polarization-independent InGaAlAs/InAlAs MQW EA modulator by optimizing the MQW strain and the structure of the modulator.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; infrared spectra; quantum well devices; semiconductor quantum wells; valence bands; InGaAlAs-InAlAs; MQW strain; absorption spectra; optimized strained-MQW; polarization-independent InGaAlAs/InAlAs electroabsorption modulators; structure; valence-subband structure; Absorption; Capacitive sensors; Indium compounds; Optical modulation; Optical polarization; Page description languages; Quantum well devices; Resonance; Tellurium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811368

Filename

811368