Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride

Author

Seo, J.T. ; Hommerich, U. ; Thaik, M. ; MacKenzie, J.D. ; Abernathy, C.R. ; Zavada, J.M.

Author_Institution

Dept. of Phys., Hampton Univ., VA, USA

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

284

Abstract

GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.

Keywords

chemical beam epitaxial growth; electroluminescence; erbium; gallium compounds; impurity absorption spectra; infrared sources; infrared spectra; light emitting diodes; photoluminescence; 1.54 /spl mu/m light emitting device; 1.54 mum; GaN:Er; InGaN-GaN:Er; efficient below-gap absorption bands; electroluminescence; erbium-doped gallium nitride; infrared hybrid InGaN-GaN:Er LED; metalorganic molecular beam epitaxy; photoluminescence; photoluminescence excitation spectroscopy; room temperature; Absorption; Carbon dioxide; Erbium; Gallium nitride; III-V semiconductor materials; Light emitting diodes; Optical films; Photoluminescence; Photonic band gap; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811415

Filename

811415