Truncated cone shaped epitaxial growth using monocrystalline shadow mask and its application to surface emission LED

Author

Eun-Hyun Park ; Young-Se Kwon

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Seoul, South Korea

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

316

Abstract

We study the side shape of an epitaxial growth layer on a monocrystalline shadow masked substrate (MSMG) and propose a method to control the side angle to obtain a truncated cone shaped total reflector with 45/spl deg/ side angle. We also propose a novel high radiance surface emitting LED (SE-LED) structure using the side angle controlled MSMG and predict several advantages of the proposed structure.

Keywords

MOCVD; light emitting diodes; semiconductor growth; vapour phase epitaxial growth; In/sub 0.47/Ga/sub 0.53/As-InP; SE-LED; high radiance surface emitting LED; monocrystalline shadow mask; monocrystalline shadow masked substrate; side angle; side angle controlled MSMG; surface emission LED; truncated cone shaped epitaxial growth; truncated cone shaped total reflector; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Light emitting diodes; MOCVD; Optical devices; Shape control; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811431

Filename

811431