Numerical analysis of switching in the IGBT triggered thyristor

Author

Sumida, Hitoshi ; Ueno, Katsunori ; Iwamuro, Noriyuki ; Tagami, Saburo

Author_Institution

Fuji Electr. Corp. Res & Dev. Ltd., Nagano, Japan

fYear

1991

fDate

22-24 Apr 1991

Firstpage

132

Lastpage

137

Abstract

A monolithic power switching device structure for a MOS-controlled thyristor, called the IGBT (insulated gate bipolar transistor) triggered thyristor (ITT), is presented. In this device, a thyristor element is integrated into an IGBT structure and the minority carriers of the IGBT supply the trigger current of the thyristor. The target of this device is to achieve lower forward voltage than an IGBT without drastic deterioration of the turn-off characteristics. Numerical results on the ITT performance, and the on-state and the turn-off characteristics under inductive loads are described as compared with a conventional IGBT. Two-dimensional simulation results indicate that the forward voltage drop is lower than that of the IGBT and the MOS-gate turn-off capability is retained under inductive loads. The forward voltage drop at an on-state current of 100 A/cm² is 1.5 V, which is about 0.5 V lower than that of the IGBT, and the turn-off time is 0.19 μs, which is a little longer than that of the IGBT

Keywords

equivalent circuits; insulated gate bipolar transistors; semiconductor device models; semiconductor switches; thyristors; 0.19 mus; 1.5 V; 2D simulation; IGBT triggered thyristor; MOS-controlled thyristor; MOS-gate turn-off capability; forward voltage drop; inductive loads; insulated gate bipolar transistor; minority carriers; monolithic power switching device structure; numerical analysis; switching; trigger current; turn-off characteristics; turnoff time; Cathodes; Current density; Current supplies; Impedance; Insulated gate bipolar transistors; Laboratories; Low voltage; Numerical analysis; Research and development; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on

Conference_Location

Baltimore, MD

ISSN

1063-6854

Print_ISBN

0-7803-0009-2

Type

conf

DOI

10.1109/ISPSD.1991.146083

Filename

146083