Title :
Ion implanter diagnostics using SurfaceSIMS
Author :
Smith, Stephen P. ; Chia, Victor K.F. ; Yang, Ming Hong
Author_Institution :
Charles Evans & Associates, Redwood City, CA, USA
Abstract :
SIMS (secondary ion mass spectrometry) is recognized as an essential analytical tool for the diagnostic characterization of ion implanter design and operation. SurfaceSIMS (secondary ion mass spectrometry using oxygen flooding with low energy, high off-normal incident angle primary ions) provides the needed high sensitivity and uniform near-surface ion yields required for accurate and reproducible depth profiling of shallow ion implants and surface contaminants related to ion implantation
Keywords :
ion implantation; secondary ion mass spectroscopy; SurfaceSIMS; depth profiling; ion implanter diagnostics; near-surface ion yield; oxygen flooding; secondary ion mass spectrometry; sensitivity; shallow ion implant; surface contaminant; Floods; Implants; Ion beams; Ion implantation; Mass spectroscopy; Pollution measurement; Rough surfaces; Silicon; Surface contamination; Surface roughness;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586417
