Title :
Characterization of THz dipole antenna detectors
Author :
Wagoner, G.A. ; Phillips, W.D. ; Zhang, X.-C.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
31 Oct-3 Nov 1994
Abstract :
In this talk we will report on our recent characterisation of the amplitude and frequency response of a variety of coherent THz dipole antenna structures, fabricated on both low temperature grown GaAs (LT GaAs) and radiation damaged silicon-on-sapphire (RD-SOS). Systematic study of both field amplitude and frequency bandwidth responsivity, as a function of dipole length, photoconducting gap width, and photocurrent loop properties, of the newly designed detectors will be discussed
Keywords :
microwave antennas; GaAs; Si-Al2O3:Ti; THz dipole antenna detectors; amplitude response; coherent THz dipole antenna structures; dipole length; frequency bandwidth responsivity; frequency response; low temperature grown GaAs; photoconducting gap width; photocurrent loop properties; radiation damaged silicon-on-sapphire; Antenna measurements; Bolometers; Current measurement; Detectors; Dipole antennas; EMP radiation effects; Electromagnetic measurements; Gallium arsenide; Photoconductivity; Pulse measurements;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586421
