Terahertz radiation from amorphous GaAs thin film photoconductive switches

Author

Kiwa, T. ; Kawashima, I. ; Morimoto, M. ; Saijyo, H. ; Nashima, S. ; Yamashita, M. ; Tonouchi, M. ; Hangyo, M.

Author_Institution

Res. Center for Superconducting Mater. & Electron., Osaka Univ., Japan

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

447

Abstract

Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 /spl deg/C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (/spl alpha/-) GaAs prepared at between room temperature and 250 /spl deg/C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.

Keywords

III-V semiconductors; amorphous semiconductors; gallium arsenide; microwave measurement; microwave photonics; microwave switches; photoconducting materials; photoconducting switches; submillimetre wave generation; thin film devices; 250 C to 298 K; 600 C; GaAs; amorphous GaAs thin film; femtosecond time-domain reflection pump-probe measurements; low-temperature grown; microwave-photonic devices; photo-induced THz emission measurements; photoresponse; post annealing process; room temperature; terahertz radiation; terahertz radiation emitter; thin film photoconductive switches; Amorphous materials; Annealing; Gallium arsenide; Microwave devices; Photoconducting materials; Photoconductivity; Reflection; Temperature; Time domain analysis; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811513

Filename

811513