Title :
Carbon / high-k Trench Capacitor for the 40nm DRAM Generation
Author :
Aichmayr, G. ; Avellan, A. ; Duesberg, G.S. ; Kreupl, Franz ; Kudelka, S. ; Liebau, Maik
Author_Institution :
Qimonda Dresden GmbH & Co., Dresden
Abstract :
Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.
Keywords :
CMOS integrated circuits; DRAM chips; capacitors; carbon; integrated circuit reliability; C; CMOS integration; DRAM generation; capacitance; carbon based electrodes; carbon/high k trench capacitor; high conductivity; leakage; reliability; serial resistance; size 40 nm; temperature stability; thermal stability; Capacitors; Conducting materials; Dielectric materials; Electrodes; High K dielectric materials; High-K gate dielectrics; Organic materials; Random access memory; Thermal conductivity; Thermal stability; DRAM; capacitor; carbon; high-k;
Conference_Titel :
VLSI Technology, 2007 IEEE Symposium on
Conference_Location :
Kyoto
Print_ISBN :
978-4-900784-03-1
DOI :
10.1109/VLSIT.2007.4339686
