Room-temperature, electrically-pumped, multiple-active-region VCSELs with high differential efficiency at 1.55 /spl mu/m

Author

Kim, J.K. ; Hall, E. ; Sjolund, O. ; Coldren, L.A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

2

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

553

Abstract

We present all-monolithic, single-step grown, room-temperature, electrically-pumped vertical cavity lasers at 1.55 /spl mu/m based on III-As compounds, with threshold current density of 570A/cm/sup 2/, differential quantum efficiency greater than 50% and threshold voltage of 3V. We employed three active regions, epitaxially stacked in series with Esaki-junctions to increase the gain and the differential efficiency.

Keywords

III-V semiconductors; aluminium compounds; current density; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; 1.55 mum; 298 K; 3 V; 50 percent; AlInGaAs; AlInGaAs quantum well laser; Esaki-junctions; III-As compounds; active regions; all-monolithic lasers; differential efficiency; differential quantum efficiency; electrically-pumped lasers; epitaxial stacked active regions; gain; multiple-active-region VCSELs; room-temperature lasers; single-step grown lasers; threshold current density; threshold voltage; vertical cavity lasers; Absorption; Distributed Bragg reflectors; Mirrors; Optical losses; Quantum computing; Surface emitting lasers; Temperature; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811566

Filename

811566