Medium and high energy phosphorus implants into silicon

Author

Whalen, P.M. ; Lavine, J.P. ; Zheng, L.

Author_Institution

Microelectron. Technol. Div., Eastman Kodak Co., Rochester, NY, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

571

Lastpage

574

Abstract

The present investigation explores MeV phosphorus implants into silicon through an oxide. Secondary ion mass spectrometry (SIMS) provides the experimental depth profiles, which are compared to simulations that include the crystal structure. The calculated results are noticeably shallower than the data. The experimental results do not agree with depth profiles based on published moments. The effect of the oxide thickness is studied with the aid of the simulations and the trends of the moments with oxide thickness are presented

Keywords

doping profiles; elemental semiconductors; ion implantation; phosphorus; secondary ion mass spectra; semiconductor process modelling; silicon; MeV implants; SIMS; Si:P; crystal structure; depth profiles; high energy P implants; medium energy P implants; oxide layer; oxide thickness; secondary ion mass spectrometry; Computational modeling; Costs; Energy loss; Ion implantation; Mass spectroscopy; Microelectronic implants; Monte Carlo methods; Semiconductor device modeling; Silicon compounds; Silicon devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586453

Filename

586453