Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT

Author

Rothschild, A. ; Shi, X. ; Everaert, J.-L. ; Kerner, C. ; Chiarella, T. ; Hoffmann, T. ; Vrancken, C. ; Shickova, A. ; Yoshinao, H. ; Mitsuhashi, R. ; Niwa, M. ; Lauwers, A. ; Veloso, A. ; Kittl, J. ; Absil, P. ; Biesemans, S.

Author_Institution

IMEC, Leuven

fYear

2007

fDate

12-14 June 2007

Firstpage

198

Lastpage

199

Abstract

We achieved 635/250 muA/mum @ I_off=20 pA/mum unstrained FuSI/HfSiON nMOS/pMOS devices (Vdd=1.1 V, I_off=20 pA/mum, J_g=20/8 mA/cm²) representing a 20%/2% device improvement enabling 10% power delay improvement compared to our previous report. This was reached by a careful optimization of the nitrogen content into our HfSiON gate dielectric (to be 3-6%). Second, we demonstrate that the nitrogen content impacts not only the device performance but also the gate leakage current, the gate oxide integrity as well as PBTI and NBTI. We also report for the first time a 0.8 nm EOT HfSiON dielectric with Ni-FuSI gate and its impact on ring oscillator delay resulting in 9 ps delays. This is an absolute record for any CMOS with metal gate to date.

Keywords

CMOS integrated circuits; MOSFET; delays; dielectric materials; hafnium compounds; oscillators; CMOS; EOT; HfSiON; HfSiON gate dielectrics; gate leakage current; gate oxide integrity; nMOS-pMOS devices; nitrogen content; power delay improvement; size 0.8 nm; time 9 ps; unloaded ring oscillator delay; Delay effects; Dielectric devices; Leakage current; MOS devices; Niobium compounds; Nitrogen; Plasma devices; Plasma properties; Presence network agents; Ring oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2007 IEEE Symposium on

Conference_Location

Kyoto

Print_ISBN

978-4-900784-03-1

Type

conf

DOI

10.1109/VLSIT.2007.4339691

Filename

4339691