Wafer temperature and stress profiles in an MeV ion implanter using the finite-element method

Author

LaFontaine, M. ; Tokoro, N. ; O´Connor, J.P.

Author_Institution

Ion Technol. Div., Genus Inc., Newburyport, MA, USA

fYear

1996

fDate

16-21 Jun 1996

Firstpage

583

Lastpage

586

Abstract

Temperature profiles produced by an ion beam striking a silicon wafer in a batch process are determined using finite-element analysis (FEA). The fast scan is analyzed for temperature depth profile and transient characteristics. Effects of beam diameter and fast-scan speed are obtained. Uniform thermalization and nonuniform thermalization in the implant layer are examined. Transient thermal stresses resulting from temperature differentials are obtained. The slow scan is analyzed for lateral, bulk temperature profiles. The effects of beam power and slow-scan speed are determined. Data are presented for 200 mm wafers

Keywords

finite element analysis; ion implantation; semiconductor process modelling; temperature distribution; thermal analysis; thermal stresses; transient analysis; 200 mm; FEA; MeV ion implanter; batch process; beam diameter; beam power; fast-scan speed; finite-element method; lateral bulk temperature profiles; nonuniform thermalization; slow scan speed; transient characteristics; transient thermal stresses; uniform thermalization; wafer stress profiles; wafer temperature profiles; Cooling; Finite element methods; Implants; Ion accelerators; Semiconductor device modeling; Silicon; Temperature; Tensile stress; Thermal stresses; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Conference_Location

Austin, TX

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586462

Filename

586462