The influence of a magnetic field on a crystalline structure of carbon nitride thin films deposition

Author

Kim, J.I. ; Kudryashov, S.I.

Author_Institution

Dept. of Chem., Moscow State Univ., Russia

Volume

1

fYear

1999

fDate

Aug. 30 1999-Sept. 3 1999

Firstpage

82

Abstract

Carbon nitride (C/sub x/N/sub y/) thin films are grown at room temperature on Si [100] substrates by reactive cathodic sputtering assisted by pulsed laser ablation of a pure graphite target with/without magnetic field assistance. The magnetic field results in an increase of crystallite size in the films due to bombardment of the Si substrates by energetic carbon and nitrogen species generated during cyclomagnetron motion of electrons in the discharge zone. An increase in nitrogen content is accompanied by a decrease in the content of sp/sup 3/-bonded carbon characteristic of the /spl beta/-C/sub 3/N/sub 4/ structure.

Keywords

X-ray diffraction; carbon compounds; crystallites; magnetic field effects; pulsed laser deposition; scanning electron microscopy; sputter deposition; sputtered coatings; /spl beta/-C/sub 3/N/sub 4/ structure; C/sub x/N/sub y/ thin films; CN; N content; Si; Si [100] substrate; Si substrate bombardment; crystallite size; discharge zone; energetic C species; energetic N species; pulsed laser ablation; pure graphite target; reactive cathodic sputtering; room temperature growth; sp/sup 3/-bonded C content; Crystallization; Laser ablation; Magnetic fields; Magnetic films; Nitrogen; Optical pulses; Semiconductor films; Semiconductor thin films; Sputtering; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO/Pacific Rim '99. The Pacific Rim Conference on

Conference_Location

Seoul, South Korea

Print_ISBN

0-7803-5661-6

Type

conf

DOI

10.1109/CLEOPR.1999.811634

Filename

811634