Title :
Electron trapping time versus annealing temperature in low temperature grown GaAs
Author :
Sun, Chi-Kuang ; Wang, Juen-Chen ; Liu, Tze-Ming ; Chiu, Yi-Jen ; Bowers, John E.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
We report in our study the carrier trapping time versus different annealing temperature, which will be important for LT-GaAs application on high speed telecommunication devices. The samples investigated are l-μm-thick MBE-grown LT-GaAs films sandwiched between two AlAs layers with a growing temperature of 220 C
Keywords :
III-V semiconductors; annealing; electron traps; gallium arsenide; high-speed optical techniques; molecular beam epitaxial growth; optical films; photodetectors; 220 C; AlAs; AlAs layers; GaAs; LT-GaAs application; MBE-grown LT-GaAs films; annealing temperature; carrier trapping time; electron trapping time; growing temperature; high speed telecommunication devices; low temperature grown GaAs; Annealing; Charge carrier processes; Electron traps; Gallium arsenide; High speed optical techniques; Optical films; Optical pulses; Optical reflection; Temperature; Ultrafast optics;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811887
