Title :
TEM investigation of C-Si defects in carbon implanted silicon
Author :
Werner, P. ; Koegler, R. ; Skorupa, W. ; Eichler, D.
Author_Institution :
MPI fur Mikrostrukturphys., Halle, Germany
Abstract :
Buried carbon implanted silicon layers were produced by high energy ion implantation of carbon into CZ silicon. The depth distribution of carbon, the morphology of the buried layer as well as precipitation of carbon were investigated as a function of rapid thermal annealing for 30s in the range of 700 to 1300°C by transmission electron microscopy, secondary ion mass spectrometry and positron annihilation spectroscopy measurements. Different kinds of microdefects were detected. In the range below 800°C vacancy clusters and metastable agglomerates of C-Si dimers exist, whereas for higher temperatures β-SiC precipitates are created. The results are discussed in terms of the interaction between carbon atoms and radiation induced defects
Keywords :
buried layers; carbon; elemental semiconductors; impurity-defect interactions; ion implantation; positron annihilation; precipitation; rapid thermal annealing; secondary ion mass spectra; silicon; transmission electron microscopy; vacancies (crystal); β-SiC precipitates; 30 s; 700 to 1300 C; C atom/radiation induced defect interaction; C depth distribution; C precipitation; C-Si defects; C-Si dimers; CZ Si; HREM; Si:C; TEM; buried layer morphology; high energy ion implantation; ion implantation; metastable agglomerates; microdefects; positron annihilation spectroscopy; rapid thermal annealing; secondary ion mass spectrometry; vacancy clusters; Atomic measurements; Ion implantation; Mass spectroscopy; Metastasis; Morphology; Positrons; Rapid thermal annealing; Silicon; Temperature distribution; Transmission electron microscopy;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586497
