• DocumentCode
    348535
  • Title

    Characterization of a high throughput implanter for the low temperature polysilicon AMLCD industry

  • Author

    Shao, Y. ; Blake, J. ; Chen, K. ; Brailove, A. ; King, M. ; Sato, M.

  • Author_Institution
    Eaton Corp., Beverly, MA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    251
  • Abstract
    The ORion 6072 implanter was introduced over one year ago. It exploits the cost advantages of a ribbon beam without mass analysis and achieves high throughput through active panel cooling in multiple load locks. During the past year we have gained considerable experience with these machines, both in our factory and in the field. We report here on extent to which the design goals have been met in practice. Specifically we provide data on phosphorous and boron dose accuracy and stability for source/drain, LDD and channel implants using both measurements made in situ, and SPC data on implanted samples (+/-5%), cooling rate (10s) and throughput (60/hr)
  • Keywords
    elemental semiconductors; ion implantation; semiconductor device manufacture; semiconductor doping; silicon; LDD implants; ORion 6072 implanter; Si; active panel cooling; channel implants; dose accuracy; high throughput implanter; low temperature polysilicon AMLCD industry; multiple load locks; ribbon beam; source/drain implants; Active matrix liquid crystal displays; Active matrix technology; Cooling; Flat panel displays; Implants; Liquid crystal displays; Plasma measurements; Plasma temperature; Stability; Throughput;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812099
  • Filename
    812099