DocumentCode
348535
Title
Characterization of a high throughput implanter for the low temperature polysilicon AMLCD industry
Author
Shao, Y. ; Blake, J. ; Chen, K. ; Brailove, A. ; King, M. ; Sato, M.
Author_Institution
Eaton Corp., Beverly, MA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
251
Abstract
The ORion 6072 implanter was introduced over one year ago. It exploits the cost advantages of a ribbon beam without mass analysis and achieves high throughput through active panel cooling in multiple load locks. During the past year we have gained considerable experience with these machines, both in our factory and in the field. We report here on extent to which the design goals have been met in practice. Specifically we provide data on phosphorous and boron dose accuracy and stability for source/drain, LDD and channel implants using both measurements made in situ, and SPC data on implanted samples (+/-5%), cooling rate (10s) and throughput (60/hr)
Keywords
elemental semiconductors; ion implantation; semiconductor device manufacture; semiconductor doping; silicon; LDD implants; ORion 6072 implanter; Si; active panel cooling; channel implants; dose accuracy; high throughput implanter; low temperature polysilicon AMLCD industry; multiple load locks; ribbon beam; source/drain implants; Active matrix liquid crystal displays; Active matrix technology; Cooling; Flat panel displays; Implants; Liquid crystal displays; Plasma measurements; Plasma temperature; Stability; Throughput;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812099
Filename
812099
Link To Document