Author :
Kang, D.H. ; Kim, Jong Soo ; Kim, Y.R. ; Kim, Y.T. ; Lee, M.K. ; Jun, Y.J. ; Park, Jae Hyo ; Yeung, Frankie ; Jeong, C.W. ; Yu, Jinpeng ; Kong, J.H. ; Ha, D.W. ; Song, S.A. ; Park, Jongho ; Park, Yu-Seop ; Song, Young Jun ; Eum, C.Y. ; Ryoo, K.C. ; Shin,
Abstract :
Programming with larger current than optimized one is often preferable to ensure a good resistance distribution of high-resistive reset state in high-density phase-change random access memories because it is very effective to increase the resistance of cells to a target value. In this paper, we firstly report that this larger current writing may conversely degrade the reset distribution by reducing the resistance of normal cells via the partial crystallization of amorphous Ge2Sb2Te5 and this degradation can be suppressed by designing a novel cell structure with a heat dissipating layer.
Keywords :
amorphous semiconductors; antimony compounds; crystallisation; germanium compounds; phase change materials; random-access storage; ternary semiconductors; heat dissipating cell scheme; heat dissipating layer; partial crystallization; phase-change random access memory; Amorphous materials; Cooling; Crystallization; Degradation; Phase change materials; Phase change random access memory; Resistance heating; Switches; Temperature; Writing;
