Implant activation and redistribution of dopants in GaN

Gallium nitride (GaN) and related III-Nitride materials (AlN, InN) have recently been the focus of extensive research for photonic and electronic device applications. As this material system matures, ion implantation doping and isolation is expected to play an important role in advance device demonstrations. To this end, we report the demonstration of implanted p-type doping with ²⁴Mg+³¹ P and ⁴⁰Ca as well as n-type doping with Si in GaN. These implanted dopants require annealing ~1100°C to achieve electrical activity, but demonstrate limited redistribution at this temperature. The redistribution of other potential dopants in GaN (such as Be, Zn, and Cd) will also be reported. Results for a GaN junction field effect transistor (JFET), the first GaN device to use implantation doping, will also be presented