• DocumentCode
    3485956
  • Title

    Quantum confinement effect for efficient hole injection in MONOS-type nonvolatile memory-the role of ultrathin i-Si/P+ poly-Si stacked gate structure fabricated by laser spike annealing

  • Author

    Yanagi, I. ; Mine, T. ; Shima, A. ; Saito, S. ; Hisamoto, D. ; Shimamoto, Y.

  • Author_Institution
    Hitachi Ltd., Tokyo
  • fYear
    2007
  • fDate
    12-14 June 2007
  • Firstpage
    146
  • Lastpage
    147
  • Abstract
    A novel hole injection method is proposed for fast and damage-free erasing operation in MONOS-type nonvolatile memory. Ultrathin intrinsic Si (i-Si) layer at the interface between gate dielectrics and P+ poly-Si gate produces quantum confinement level of hole. This lowers effective band offset, thus, significantly increases hole tunneling probability from the gate electrode. By applying the novel gate structure to MONOS cells, we successfully demonstrate memory operation with 100 times faster erase speed and larger memory window than conventional gate.
  • Keywords
    electrodes; laser beam annealing; random-access storage; silicon; tunnelling; MONOS; Si; gate electrode; hole injection; hole tunneling; laser spike annealing; nonvolatile memory; quantum confinement; stacked gate structure; Annealing; Boron; Channel bank filters; Charge carrier processes; Dielectrics; Electrodes; MONOS devices; Nonvolatile memory; Potential well; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-03-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2007.4339762
  • Filename
    4339762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3485956