• DocumentCode
    3486009
  • Title

    A Novel Hafnium Carbide (HfCx) Metal Gate Electrode for NMOS Device Application

  • Author

    Hwang, Wan Sik ; Shen, Chen ; Wang, Xing Peng ; Chan, Daniel S H ; Cho, Byung Jin

  • Author_Institution
    Nat. Univ. of Singapore, Singapore
  • fYear
    2007
  • fDate
    12-14 June 2007
  • Firstpage
    156
  • Lastpage
    157
  • Abstract
    Hafnium carbide (HfCx) is investigated as a novel metal gate electrode with good thermal stability for the first time. HfCx shows a very low work function of 3.8 eV on HfO2, suitable for NMOS device applications, and provides superior oxygen diffusion barrier properly during high temperature annealing. In addition, there is no sign of significant Fermi level pinning with HfO2 dielectric.
  • Keywords
    MOS integrated circuits; electrodes; hafnium compounds; thermal stability; HfC; NMOS device; hafnium carbide metal gate electrode; high temperature annealing; oxygen diffusion barrier properly; thermal stability; Annealing; Application software; CMOS process; Electrodes; FCC; Hafnium oxide; Hybrid fiber coaxial cables; MOS devices; Temperature; Thermal stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 2007 IEEE Symposium on
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-900784-03-1
  • Type

    conf

  • DOI
    10.1109/VLSIT.2007.4339764
  • Filename
    4339764
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3486009