Title :
Operational phase-space of separation by plasma implantation of oxygen (SPIMOX)
Author :
Iyer, S. Sundar Kumar ; Lu, Xiang ; Liu, Jingbao ; Linder, Barry ; Hu, Chenming ; Cheung, Nathan W. ; Min, Jing ; Fan, Zhineng ; Chu, Paul
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
SPIMOX using plasma immersion ion implantation (PIII) has been proposed as a cost-effective method for fabricating silicon on insulator (SOI) wafers. PIII, compared to conventional implanters, allows for simpler and low maintenance-cost implanters. High throughput, independent of the wafer size can be achieved by the SPIMOX process. A phase-space of implantation time and implantation pressure is developed to determine the operational regions for SPIMOX implantation. SPIMOX process using high fractional ionization plasma for implantation is found to be particularly suited for thin SOI fabrication required for future low-power IC applications
Keywords :
SIMOX; ion implantation; SOI wafer fabrication; SPIMOX; low-power IC; phase space; plasma immersion ion implantation; Costs; Implants; Ionization; Nuclear and plasma sciences; Oxygen; Plasma immersion ion implantation; Plasma materials processing; Silicon on insulator technology; Throughput; Voltage;
Conference_Titel :
Ion Implantation Technology. Proceedings of the 11th International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-3289-X
DOI :
10.1109/IIT.1996.586561
