An integrated silicon bipolar receiver subsystem for 900 MHz ISM band applications

Author

Durec, Jeff

Author_Institution

Motorola Inc., Tempe, AZ, USA

fYear

1997

fDate

28-30 Sep 1997

Firstpage

57

Lastpage

60

Abstract

A wide band dual conversion receiver subsystem is presented which is suitable for 900 MHz portable wireless applications including cordless telephone. The circuit features 118 dB of dynamic range and is operable from 6.5 V down through 2.7 V while consuming 28 mA. The receiver utilizes the MOSAIC^TM V RF silicon bipolar process and features an LNA, two mixers, two oscillators, second LO amplifier, dual modulus prescaler, IF amplifier, RSSI, coilless demodulator and power down control

Keywords

UHF integrated circuits; bipolar analogue integrated circuits; cordless telephone systems; elemental semiconductors; mobile radio; radio receivers; silicon; 2.7 to 6.5 V; 28 mA; 900 MHz; IF amplifier; ISM band; LNA; LO amplifier; MOSAIC V; RF bipolar process; RSSI; Si; bipolar receiver subsystem; coilless demodulator; cordless telephone; dual conversion receiver; dual modulus prescaler; dynamic range; mixers; oscillators; portable wireless applications; power down control; Circuits; Demodulation; Dynamic range; Oscillators; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Telephony; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting, 1997. Proceedings of the

Conference_Location

Minneapolis, MN

ISSN

1088-9299

Print_ISBN

0-7803-3916-9

Type

conf

DOI

10.1109/BIPOL.1997.647355

Filename

647355