A 10–45 GHz distributed low noise amplifier MMIC with cascode FETs

This paper has presented a compact 10-45 GHz distributed amplifier MMIC with a chip size of only 1.5 mm2. In order to improve the amplifier gain, the cascode FETs configuration has been applied to reduce the output conductance. A noise figure of better than 3.8 dB and a gain of greater than 12 dB have been achieved in schematic simulation. A circuit-EM co-simulation has also been carried out to validate the proposed design. This high performance LNA MMIC has a wide application in modern electronic systems, such as the testing equipments, the high data rate optical networks and the general wideband low noise gain blocks.