DocumentCode :
3486748
Title :
SiGe 30GHz active inductor based on cascode gyrator
Author :
Torres, Jorge Alves ; Freire, João Costa
Author_Institution :
Inst. de Telecomun., Lisbon
fYear :
2008
fDate :
16-20 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
A monolithic active inductor, to be used up to millimetre wave band lower edge, 30GHz, was implemented with a SiGe technology with 4 metal layers and HBTs with fT=120 GHz. The inductor has a Q greater then 30 on a 4.5GHz bandwidth. The inductance value can be as high as InH. Adjusting the bias conditions an inductance variation over 50% was measured.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; active networks; gyrators; heterojunction bipolar transistors; inductors; HBT; SiGe; cascode gyrator; millimetre wave band lower edge; monolithic active inductor; Active inductors; Bandwidth; Capacitors; Germanium silicon alloys; Gyrators; Inductance; Q factor; Resonance; Resonant frequency; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008. APMC 2008. Asia-Pacific
Conference_Location :
Macau
Print_ISBN :
978-1-4244-2641-6
Electronic_ISBN :
978-1-4244-2642-3
Type :
conf
DOI :
10.1109/APMC.2008.4958305
Filename :
4958305
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3486748
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