Title :
Piezoelectric effect in InGaAs/GaAs quantum wells grown on (111)A GaAs observed by photoluminescence spectroscopy
Author :
Vaccaro, P. ; Tominaga, K. ; Hosoda, M. ; Fujita, K. ; Watanabe, T.
Author_Institution :
ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan
fDate :
31 Oct-3 Nov 1994
Abstract :
There has been considerable interest in the optical and electrical properties of InGaAs/GaAs strained quantum wells (SQW) grown on (111) oriented substrates because of the presence of a built-in electric field originating in the piezoelectric effect. If an external electric field opposite to the built-in electric field is applied, a blueshift of the optical transition energies can be observed. In this paper we report the observation of this blueshift by photoluminescence spectroscopy in In 0.2Ga0.8As/GaAs SQWs grown on (111)A GaAs
Keywords :
spectral line shift; (111)A GaAs; GaAs; In0.2Ga0.8As-GaAs; blueshift; built-in electric field; optical transition energies; photoluminescence spectroscopy; piezoelectric effect; strained quantum well; Charge carrier processes; Electron optics; Energy states; Gallium arsenide; Indium gallium arsenide; Laboratories; P-i-n diodes; Photoluminescence; Piezoelectric effect; Spectroscopy;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-1470-0
DOI :
10.1109/LEOS.1994.586611
