DocumentCode
3487477
Title
Low threshold 1.55 μm quantum well lasers grown with tertiarybutylarsine and tertiarybutylphosphine
Author
Mathur, Atul ; Dapkus, P.Daniel
Author_Institution
Dept. of Electr. Eng.-Electrophys., Univ. of Southern California, Los Angeles, CA, USA
Volume
2
fYear
1994
fDate
31 Oct-3 Nov 1994
Firstpage
373
Abstract
In this paper, we report on the performance of compressive strained quaternary InGaAsP quantum well lasers with record thresholds and compare them to InGaAs tensile strained devices with comparable well width and confinement factor. Equally important, these devices were MOCVD grown with tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP) instead of arsine and phosphine
Keywords
indium compounds; 1.55 mum; InGaAs; InGaAs tensile strained devices; InGaAsP; MOCVD grown; comparable well width; compressive strained quaternary InGaAsP quantum well lasers; confinement factor; low threshold 1.55 μm quantum well lasers growth; record thresholds; tertiarybutylarsine; tertiarybutylphosphine; Capacitive sensors; Chemical lasers; Density measurement; Laser modes; Lattices; MOCVD; Pulsed laser deposition; Quantum well lasers; Tensile strain; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
Conference_Location
Boston, MA
Print_ISBN
0-7803-1470-0
Type
conf
DOI
10.1109/LEOS.1994.586622
Filename
586622
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