20-GHz, 20-dBm pseudo-differential power amplifier in standard 90-nm CMOS

Author

Kawano, Yoichi ; Suzuki, Toshihide ; Sato, Masaru ; Nakasha, Yasuhiro ; Hirose, Tatsuya ; Hara, Naoki ; Joshin, Kazukiyo

Author_Institution

Fujitsu Ltd., Atsugi

fYear

2008

fDate

16-20 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper presents a 20-GHz pseudo-differential power amplifier (PA) fabricated in a standard 90-nm Si-CMOS process. The pseudo-differential PA has a two-stage cascode configuration with differential input and output ports. Assuming the use of an off-chip transformer, the input impedance of each single PA is designed to be 6.25 Omega and the output impedance to be 25 Omega. The individual amplifier fabricated demonstrates a saturation power of 20 dBm with a linear gain of 18 dB at 20 GHz. The supply voltage is 2.4 V, and the chip size is 2.0 times 1.8 mm².

Keywords

CMOS analogue integrated circuits; MMIC power amplifiers; differential amplifiers; elemental semiconductors; field effect MMIC; integrated circuit design; nanoelectronics; silicon; CMOS process; Si; amplifier fabrication; frequency 20 GHz; gain 18 dB; off-chip transformer; pseudo-differential power amplifier design; size 90 nm; two-stage cascode configuration; voltage 2.4 V; CMOS process; Circuits; Costs; Gain; Impedance; Microwave devices; Millimeter wave technology; Millimeter wave transistors; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2008. APMC 2008. Asia-Pacific

Conference_Location

Macau

Print_ISBN

978-1-4244-2641-6

Electronic_ISBN

978-1-4244-2642-3

Type

conf

DOI

10.1109/APMC.2008.4958349

Filename

4958349