A 5GHz/1.8V CMOS active balun integrated with LNA

An RF active balun integrated with LNA was presented. The total circuit is fully integrated in a low cost CMOS process with total area of 1mm². Simulations show that under a 1.8V power supply the circuit has a 23 dB differential gain at 5 GHz with 8mA current consumption. The overall circuit presents a well balanced broadband behavior, since the balun exhibits low differential phase and magnitude errors. It also achieves better performance in S₂₁, ldB_CPO, OIP₃ and power consumption.