Title :
Operation of IGBTs at low temperatures
Author :
Chow, T. Paul ; So, K.C. ; Lau, David
Author_Institution :
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
The static and dynamic performance of 600 V, n- and p-channel, vertical insulated-gate bipolar transistors (IGBTs) at temperatures as low as 77 K has been measured and analyzed. Both types of IGBTs demonstrate a better performance at low temperatures in turn-off times and maximum gate controllable current, at the expense of a slightly higher forward drop
Keywords :
insulated gate bipolar transistors; power transistors; 600 V; 77 K; dynamic performance; forward drop; maximum gate controllable current; p-channel devices; static performance; turn-off times; vertical insulated-gate bipolar transistors; Buffer layers; Charge carrier lifetime; Conductivity; Insulated gate bipolar transistors; Insulation; Performance analysis; Space heating; Switches; Temperature dependence; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146105
