Title :
Comparison of Fowler-Nordheim stress on tungsten polycided and non-polycided MOS capacitors
Author :
Ooi, J.A. ; Ling, C.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Singapore, Singapore
Abstract :
Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. Tungsten silicidation is shown to greatly improve the immunity of the MOS gate oxide to Fowler-Nordheim stress-induced charge generation and trapping. The silicidation process appears to have hardened the oxide to new trap creation
Keywords :
MOS capacitors; electron traps; elemental semiconductors; internal stresses; semiconductor device metallisation; silicon; silicon compounds; tungsten compounds; Fowler-Nordheim stress; MOS gate oxide; WSi-SiO2-Si; nonpolycided MOS capacitors; polycided MOS capacitors; silicidation process; stress-induced charge generation; stress-induced charge trapping; trap creation; CMOS technology; Current measurement; Electrons; Hydrogen; MOS capacitors; Silicidation; Stress; Tungsten; Tunneling; Voltage;
Conference_Titel :
Semiconductor Electronics, 1996. ICSE '96. Proceedings., 1996 IEEE International Conference on
Conference_Location :
Penang
Print_ISBN :
0-7803-3388-8
DOI :
10.1109/SMELEC.1996.616443
