Title :
High-Voltage trenched rectifiers for Smart Power technology
Author :
Roig, J. ; Desoete, B. ; Moens, P. ; Bauwens, F.
Author_Institution :
Smart Power Center of Excellence, ON Semicond., Oudenaarde
Abstract :
High-voltage junction and Schottky trenched power rectifiers (HV-JTPR and STPR) are fabricated and analyzed in this paper for 70 V to 100 V reverse voltage applications. Resulting from their combination, an innovative hybrid device (HTPR), with alternated Schottky/Junction fingers, is a proper solution to control the trade-off between the losses in forward and reverse modes.
Keywords :
power integrated circuits; Schottky finger; forward mode; high-voltage trenched rectifiers; hybrid device; junction finger; reverse mode; schottky trenched power rectifiers; smart power technology; voltage 70 V to 100 V; Doping; Fingers; Hybrid junctions; Implants; MOS capacitors; Medium voltage; Protection; Rectifiers; Silicon on insulator technology; Thyristors;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681699
