Design of rugged High Voltage high power P-channel silicon MOSFET for plasma applications

Author

Zhang, Jinshu ; Sdrulla, Dumitru ; Tsang, Dahwen ; Frey, Dick ; Krausse, George

Author_Institution

Microsemi Power Product Group, Microsemi Corp., Bend, OR

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

71

Lastpage

74

Abstract

High voltage P-channel RF MOSFET was designed and fabricated by a proprietary self-aligned VDMOS process. When this device is used for class C application at an operating frequency of 40.68 MHz and drain bias of 125 V, the CW output power can reach 350 W, and power gain is 18 dB. Therefore, this 500 V P-channel MOSFET can be used as high side switch transistor in half bridge circuit to generate more RF power for plasma applications up to 40.68 MHz.

Keywords

MOSFET; elemental semiconductors; semiconductor device testing; silicon; RF power; Si; frequency 40.68 MHz; half bridge circuit; high power; high side switch transistor; high voltage; p-channel silicon MOSFET; self-aligned VDMOS process; voltage 125 V; voltage 500 V; Gain; MOSFET circuits; Plasma applications; Power MOSFET; Power generation; Radio frequency; Silicon; Switches; Switching circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Conference_Location

Edinburgh

ISSN

1930-8876

Print_ISBN

978-1-4244-2363-7

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2008.4681701

Filename

4681701