Title :
Novel wide-emitter SiGe HBT technology for RF power applications
Author :
Washio, Katsuyoshi ; Shimamoto, Hiromi ; Miura, Makoto ; Oda, Katsuya
Author_Institution :
Central Res. Lab., Hitachi, Ltd., Tokyo
Abstract :
A novel SiGe HBT, featuring emitter-width-tolerable DC and RF performance, for RF power applications is proposed. This transistor, with a bow-tie-shaped base structure, allows large tolerance for emitter widths from 0.2 to 0.75 mum. Its validity for having nearly constant high-frequency performance, in terms of cutoff frequency and maximum oscillation frequency of about 100 GHz, and low base resistance, even with a wide emitter, is confirmed.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; DC performance; RF performance; SiGe; Wide-Emitter SiGe HBT; bow-tie-shaped base structure; cutoff frequency; low base resistance; maximum oscillation frequency; size 0.2 mum to 0.75 mum; transistor; Cutoff frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Microwave devices; Microwave technology; Millimeter wave communication; Millimeter wave technology; Millimeter wave transistors; Radio frequency; Silicon germanium;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681709
