On the role of a HTO/Al2O3 bi-layer blocking oxide in nitride-trap non-volatile memories

Author

Bocquet, M. ; Molas, G. ; Perniola, L. ; Garros, X. ; Buckley, J. ; Gely, M. ; Colonna, J.P. ; Grampeix, H. ; Martin, F. ; Vidal, V. ; Toffoli, A. ; Salvo, B. De ; Deleonibus, S. ; Pananakakis, G. ; Ghibaudo, G.

Author_Institution

CEA LETI MINATEC, Grenoble

fYear

2008

fDate

15-19 Sept. 2008

Firstpage

119

Lastpage

122

Abstract

In this work, we present an experimental and theoretical study of nitride trap devices with a HTO/Al₂O₃ bi-layer blocking oxide. Such SAONOS (Silicon/Alumina/HTO/Nitride/Oxide/Silicon) devices are compared with standard SONOS (Silicon/HTO/Nitride/Oxide/Silicon) and SANOS (Silicon/Alumina/Nitride/Oxide/Silicon) memories. The role of the different layers (blocking oxide and control gate) is deeply analyzed, focusing on their impact on memory performance and reliability. Then, a semi-analytical model is developed, which provides a good understanding of the physical mechanisms at the origin of program/erase characteristics.

Keywords

alumina; elemental semiconductors; semiconductor device models; semiconductor device reliability; semiconductor storage; silicon; silicon compounds; JkO-Al₂O₃-Si-SiN; bi-layer blocking oxide; control gate layers; nitride-trap nonvolatile memories; reliability; silicon/alumina/HTO/nitride/oxide/silicon devices; Aluminum oxide; Charge carrier processes; High K dielectric materials; High-K gate dielectrics; MOSFETs; Nonvolatile memory; Performance analysis; SONOS devices; Silicon; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European

Conference_Location

Edinburgh

ISSN

1930-8876

Print_ISBN

978-1-4244-2363-7

Electronic_ISBN

1930-8876

Type

conf

DOI

10.1109/ESSDERC.2008.4681713

Filename

4681713