Title :
Enhancing noise margins of FinFET SRAM by integrating Vth-controllable flexible-pass-gates
Author :
Endo, Kazuhiko ; O´uchi, Shin-ichi ; Ishikawa, Yuki ; Liu, Yongxum ; Matsukawa, Takashi ; Masahara, Meishoku ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Ishii, Kenichi ; Yamauchi, Hiromi ; Suzuki, Eiichi
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba
Abstract :
We propose a flexible-pass-gate (Flex-PG) FinFET SRAM to enhance both the read and write noise margins. The flip-flop in the Flex-PG SRAM cell consists of usual FinFETs while its pass gates consist of Vth-controllable four-terminal (4T) FinFETs with independent double-gates. We experimentally demonstrate that the proposed Flex-PG SRAM increases both the read and write margins by controlling the Vth of the pass gates.
Keywords :
MOSFET; SRAM chips; flexible electronics; flip-flops; FinFET SRAM; flexible pass gates; flip-flop; noise margins; read and write margins; Circuits; Electronic mail; Energy consumption; FinFETs; Flip-flops; Nanoelectronics; Random access memory; Stability; Ultra large scale integration; Voltage control;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681720
