Title :
High switching speed 1500 V IGBT for CRT deflection circuit
Author :
Seki, Y. ; Hoshi, Y. ; Shimabukuro, H. ; Suganuma, N. ; Nishiura, Akira ; Uchida, Y.
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Nagano, Japan
Abstract :
A novel 1500 V IGBT (insulated gate bipolar transistor) was developed for the CRT horizontal deflection circuit. The authors clarify the device characteristics needed for the horizontal deflection circuit and demonstrate the 1500 V IGBT specially designed for this application. In order to make it possible to operate in the high frequency region, the device design and process conditions in the IBGT, i.e., the surface MOS-gate structure, the n+ buffer layer structure, and the lifetime killer control, were optimized. It was confirmed that this 1500 V IGBT was driven and operated up to a 70 kHz deflection frequency
Keywords :
cathode-ray tubes; insulated gate bipolar transistors; semiconductor switches; 1500 V; 70 kHz; CRT deflection; IGBT; deflection frequency; device characteristics; horizontal deflection circuit; lifetime killer control; n+ buffer layer structure; process conditions; surface MOS-gate structure; Buffer layers; Cathode ray tubes; Displays; Frequency; Impedance; Insulated gate bipolar transistors; Inverters; Switching circuits; TV; Voltage;
Conference_Titel :
Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-0009-2
DOI :
10.1109/ISPSD.1991.146108
