DocumentCode
3489554
Title
Transient behaviors in partially depleted thin film SOI devices
Author
Shin, H.C. ; Lim, I.S. ; Racanelli, M. ; Huang, W.M. ; Foerstner, J. ; Hwang, B.Y. ; Whitfield, J. ; Shin, H. ; Wetteroth, T. ; Hong, S. ; Wilson, S. ; Cheng, S.
Author_Institution
Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
fYear
1995
fDate
3-5 Oct 1995
Firstpage
4
Lastpage
5
Abstract
The floating-body configuration in SOI devices is desirable because of area efficiency and parasitics reduction. It has been predicted recently that there exists a dynamic floating-body effect in partially depleted SOI devices, which can lead to transient currents during device turn-on/off. This paper presents the observed current transients due to the dynamic floating body effects. The transient behaviors are analyzed and device simulation was done to confirm our analysis
Keywords
silicon-on-insulator; thin film devices; transient analysis; area efficiency; current transients; dynamic floating-body effect; parasitics; partially depleted thin film SOI devices; simulation; Analytical models; Current measurement; Electrons; Medical simulation; Spontaneous emission; Steady-state; Substrates; Thin film devices; Threshold voltage; Transient analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location
Tucson, AZ
Print_ISBN
0-7803-2547-8
Type
conf
DOI
10.1109/SOI.1995.526432
Filename
526432
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