Title :
Folded fully depleted Bulk+ technology as a highly W-scaled planar solution
Author :
Bidal, G. ; Loubet, N. ; Fenouillet-Beranger, C. ; Denorme, S. ; Perreau, P. ; Chanemougame, D. ; Laviron, C. ; Leverd, F. ; Barnola, S. ; Beneyton, R. ; Duluard, C. ; Chapon, J.D. ; Gouraud, P. ; Salvetat, T. ; Grosjean, M. ; Deloffre, E. ; Fleury, D. ;
Author_Institution :
STMicroelectronics, Crolles
Abstract :
This work proposes a Bulk+ planar fully depleted ldquofoldedrdquo technology as an innovative cost worthy solution for upcoming low power nodes. We report a detailed fabrication method, combining advanced selective epitaxy faceting and SON (Silicon-On-Nothing) process, to provide thin film/thin BOX devices with improved transistor gain beta for a given designed footprint Wdesign. We compare the fabrication between <110> channel, i.e. non-rotated wafer, and <100> channel, i.e. 45deg-rotated wafer, for the same (100) surface orientation.
Keywords :
epitaxial growth; low-power electronics; semiconductor device manufacture; W-scaled planar solution; advanced selective; folded fully depleted Bulk+ technology; silicon-on-nothing; thin BOX devices; thin film devices; Costs; Dry etching; Epitaxial growth; Fabrication; Germanium silicon alloys; Immune system; Semiconductor thin films; Silicon germanium; Thin film devices; Thin film transistors;
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
DOI :
10.1109/ESSDERC.2008.4681735
