DocumentCode :
3489648
Title :
A mobility extraction method for 3D multichannel devices
Author :
Dupré, C. ; Ernst, T. ; Bernard, E. ; Guillaumot, B. ; Vulliet, N. ; Coronel, P. ; Skotnicki, T. ; Cristoloveanu, S. ; Ghibaudo, G. ; Deleonibus, S.
Author_Institution :
CEA/LETI, Minatec, Grenoble
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
230
Lastpage :
233
Abstract :
A novel parameter extraction method is proposed to dissociate the current contributions of each channel of highly performing Multi-Channel CMOS Low Standby Power architecture. It is shown that the very high ION/IOFF ratio (NMOS: 2.27 mA/mum for 16 pA/mum PMOS 1.32 mA/mum for 16 pA/mum) obtained experimentally benefits from good short-channel mobility values of each type of channel despite a limited degradation of the GAA mobility value.
Keywords :
MOSFET; 3D multichannel devices; NMOS; mobility extraction; multi-channel CMOS low standby power architecture; parameter extraction; short-channel mobility; Current measurement; Degradation; Electric resistance; Electric variables; MOS devices; Numerical simulation; Parameter extraction; Silicon germanium; Threshold voltage; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
ISSN :
1930-8876
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2008.4681740
Filename :
4681740
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3489648
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