A large-signal model for SOI MOSFETs including dynamic self-heating effects

Author

Caviglia, Anthony ; Iliadis, Agis A.

Author_Institution

Allied-Signal Aerosp. Co., Columbia, MD, USA

fYear

1995

fDate

3-5 Oct 1995

Firstpage

16

Lastpage

17

Abstract

This paper presents a large-signal SOI MOSFET model which explicitly includes self-heating effects. Our goal is to develop a model suitable for SOI monolithic microwave IC (MMIC) design which clearly requires a large-signal model accurate at high frequencies. In addition, the model must include the dynamic thermal response of the device since MMICs often contain microwave, RF, baseband, and bias sections spanning the range from DC to several GHz. At DC, self-heating can be modeled with a simple thermal resistance, while at microwave frequencies the temperature is effectively constant. However, at intermediate frequencies the temperature lags the applied power so the model must accurately represent the thermal dynamics in the device

Keywords

MOS integrated circuits; MOSFET; equivalent circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; microwave field effect transistors; semiconductor device models; silicon-on-insulator; thermal analysis; thermal resistance; MMIC design; SOI MOSFETs; Si; dynamic self-heating effects; dynamic thermal response; large-signal model; monolithic microwave IC; thermal dynamics; thermal resistance; Baseband; Integrated circuit modeling; MMICs; MOSFETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Radio frequency; Temperature; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1995. Proceedings., 1995 IEEE International

Conference_Location

Tucson, AZ

Print_ISBN

0-7803-2547-8

Type

conf

DOI

10.1109/SOI.1995.526438

Filename

526438