Title :
Quantum-wire effects in thin and narrow SOI MOSFETs
Author :
Baie, X. ; Colinge, J.P. ; Bayot, V. ; Grivei, E.
Author_Institution :
DICE, Univ. Catholique de Louvain, Belgium
Abstract :
If the dimensions of a semiconductor sample are reduced sufficiently, low-dimensionality effects involving quantization effects start to appear. These effects manifest themselves in the form of conductance oscillations. They appear at nanometer-scale dimensions at room temperature. However, it is possible to observe quantization effects in 100-nm-scale devices when the temperature is reduced sufficiently. In this paper measurements and simulations have been applied to SOI quantum wire MOSFETs
Keywords :
MOSFET; quantum interference devices; semiconductor quantum wires; silicon-on-insulator; 100 nm; SOI quantum wire MOSFETs; conductance oscillations; low-dimensionality effects; quantization; semiconductor device; Aluminum; Annealing; Electrons; Energy states; Fluctuations; MOSFETs; Temperature; Voltage; Wave functions; Wire;
Conference_Titel :
SOI Conference, 1995. Proceedings., 1995 IEEE International
Conference_Location :
Tucson, AZ
Print_ISBN :
0-7803-2547-8
DOI :
10.1109/SOI.1995.526463
