DocumentCode :
3490152
Title :
N-MOSFETs with inversion-layer source/drain extensions formed by cesium segregation at SiO2/Si interfaces
Author :
Kimoto, Kenji ; Tada, Tetsuya ; Kanayama, Toshihiko
Author_Institution :
MIRAI-ASET, Tsukuba
fYear :
2008
fDate :
15-19 Sept. 2008
Firstpage :
338
Lastpage :
341
Abstract :
We fabricated a novel type MOSFET with inversion layer source/drain extensions formed by Cs implantation and segregation at SiO2/Si interfaces beside the gate and demonstrate that it has significant immunity to short channel effect, gate induced drain leakage, and transient enhanced diffusion of channel boron impurities, compared to conventional MOSFETs. The stability of Cs in the device is also confirmed by bias-temperature-stress measurements.
Keywords :
MOSFET; boron; caesium; charge exchange; diffusion; elemental semiconductors; impurities; ion implantation; segregation; semiconductor doping; semiconductor-insulator boundaries; silicon; silicon compounds; SiO2-Si:Cs,B; channel boron impurities; charge transfer doping; gate induced drain leakage; implantation; inversion layer source extensions; inversion-layer drain extensions; nMOSFET; segregation; short channel effect; transient enhanced diffusion; Annealing; Atomic layer deposition; Boron; Charge transfer; Doping; Electrons; Impurities; Ionization; MOSFET circuits; Stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 2008. ESSDERC 2008. 38th European
Conference_Location :
Edinburgh
ISSN :
1930-8876
Print_ISBN :
978-1-4244-2363-7
Electronic_ISBN :
1930-8876
Type :
conf
DOI :
10.1109/ESSDERC.2008.4681767
Filename :
4681767
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3490152
بازگشت