Title :
Carbon: The future of nanoelectronics
Author :
Rispal, Lorraine ; Schwalke, Udo
Author_Institution :
Inst. for Semicond. Technol. & Nanoelectron., Tech. Univ. Darmstadt, Darmstadt, Germany
Abstract :
In the future of nanoelectronics, the exclusive use of silicon-based devices will be very unlikely since the scaling limits of silicon will be reached soon. Carbon seems to be a superb alternative to build high-performance electronic devices. Carbon nanotube field-effect transistors can be used as active devices in integrated circuits, as memory cells or as sensors in numerous applications. More recently, graphene-based transistors are emerging as another potential candidate to replace traditional MOSFETs. This contribution will give a brief overview on recent developments in carbon-based nanoelectronics.
Keywords :
carbon nanotubes; field effect transistors; graphene; nanoelectronics; C; carbon nanotube; field-effect transistors; graphene-based transistors; nanoelectronics; Atomic layer deposition; CNTFETs; Carbon nanotubes; Circuits and systems; Lattices; MOSFETs; Molecular electronics; Nanoelectronics; Semiconductivity; Silicon;
Conference_Titel :
Signals, Circuits and Systems (SCS), 2009 3rd International Conference on
Conference_Location :
Medenine
Print_ISBN :
978-1-4244-4397-0
Electronic_ISBN :
978-1-4244-4398-7
DOI :
10.1109/ICSCS.2009.5414197