DocumentCode
3490366
Title
50 watt MMIC power amplifier design for 2 GHz applications
Author
Akkul, Mustafa ; Sarfraz, Muhammed ; Mayock, Jim ; Bosch, Wolfgang
Author_Institution
Filtronic plc., Shipley, UK
Volume
3
fYear
2004
fDate
6-11 June 2004
Firstpage
1355
Abstract
In this paper the design and the measurement of a 2 GHz 50 Watt (CW) MMIC power amplifier (PA) are discussed. The authors believe that this is the most powerful MMIC implementation that has been reported. The amplifier utilizes a class-F combining structure and realized using the company internal 0.5 μm GaAs pHEMT power process. The MMIC measure 10×10 mm2 and delivers 50 Watts of CW power at an efficiency greater than 45% over more than 10% bandwidth at a nominal 12 V supply voltage. The amplifier gain is 21 dB throughout the operational band.
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; integrated circuit design; integrated circuit measurement; 0.5 micron; 12 V; 2 GHz; 21 dB; 50 W; GaAs; MMIC power amplifier; class-F combining structure; microwave power amplifier; Costs; Fabrication; Fingers; Gallium arsenide; High power amplifiers; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1338820
Filename
1338820
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