Title :
A 26 volts, 45 Watts GaAs pHEMT for 2 GHz WCDMA applications
Author :
Piel, Pierre-Marie ; Miller, Monte ; Green, Bruce
Author_Institution :
RF Div., Motorola SPS, Tempe, AZ, USA
Abstract :
An unmatched power AlGaAs/InGaAs pHEMT transistor in a ceramic package has been developed for 3G infrastructure applications. Operating at 2.14 GHz, under two carrier WCDMA a typical device delivers more than 9.2 Watts of average envelope power at -37 dBc IMD with drain efficiencies as high as 32% in class AB mode. Our paper presents the device technology, and the DC and RF performance under CW, WCDMA, and 2 carrier WCDMA signals.
Keywords :
3G mobile communication; ceramic packaging; code division multiple access; power HEMT; power amplifiers; 2 GHz; 2 carrier WCDMA; 2.14 GHz; 26 V; 3G infrastructure applications; 45 W; 9.2 W; AlGaAs-InGaAs; CW signals; DC performance; RF performance; WCDMA signals; ceramic package; unmatched power pHEMT transistor; Capacitance; Ceramics; Gallium arsenide; Multiaccess communication; PHEMTs; Packaging; Power generation; RF signals; Radio frequency; Voltage;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1338822
